semiconductor electrode
- 网络半导体电极
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A study of the flat - band potential of n-InP semiconductor electrode
n&InP半导体电极平带电位的研究
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Therefore , the position of Fermi level of electron system in noble metal is the same as that in the bulk of semiconductor electrode .
光照下贵金属中的电子具有与半导体整体相同的费米能级。
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Photoelectrochemical behaviors of Au-coated semiconductor electrode and pure Au electrode were measured in H_2SO_4 solution and acid solution containing Fe ~ ( 3 + ) / Fe ~ ( 2 + ) .
测量了这些电极和纯金电极在H2SO4溶液以及含有Fe~(3+)/Fe~(2+)的酸溶液中的光电化学极化行为。
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Theoretical Analysis of Ohm-contact of Semiconductor Ceramic Electrode
半导体陶瓷电极欧姆接触理论分析
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Study on the Light-to-Electric Energy Conversion of the Semiconductor TiO_2 Film Electrode
TiO2半导体薄膜电极的光电转换性能研究
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Study of the Kinetics of Nanocrystalline Semiconductor Thin Film Electrode Processes by Intensity Modulated Photocurrent Spectroscopy
强度调制光电流谱研究纳晶薄膜电极过程
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The electrons are passed via a semiconductor to an electrode , through which they leave the cell .
电子通过半导体到达电极,在那里它们离开电池。
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Study on Electrochromic Properties and Preparation of Semiconductor Nanoparticles ATOTiO_2 Porous Electrode
半导体纳晶ATOTiO2多孔电极制备及电色性能研究
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Because of the high modulating characteristic , the high speed semiconductor laser with different electrode and waveguide structures was investigated .
面对高速半导体激光器的高调制特性,为了降低器件的寄生电容,对不同电极、波导结构进行设计分析。
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In consideration of semiconductor ceramic sensitive elements , the surface absorption layer and energy band structure of the semiconductor ceramic electrode ohm contact are analyzed by using the principle of metal-semiconductor ohm contact .
针对半导瓷敏感元件,应用金属半导体欧姆接触原理,分析了半导瓷电极欧姆接触的表面吸附层和能带结构;